TC2384 datasheet(1/4 Pages) TRANSCOM

부품명	TC2384

상세설명	Low Noise and Medium Power Packaged GaAs FETs

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제조업체	TRANSCOM [Transcom, Inc.]

홈페이지	http://www.transcominc.com.tw

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TC2384

REV4_20070507

TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

1/4

Low Noise and Medium Power Packaged GaAs FETs

FEATURES

PHOTO ENLARGEMENT

! 0.9dB Typical Noise Figure at 12GHz

! High Associated Gain: Ga = 10dB Typical at 12GHz

! 23.5dBm Typical Power at 12GHz

! 11dB Typical Power Gain at 12GHz

! Breakdown Voltage : BV

DGO

≥ 9V

! Lg = 0.25

µm, Wg = 600 µm

! Tight Vp ranges control

! High RF input power handling capability

! 100 % DC Tested

! Micro-X Metal Ceramic Package

DESCRIPTION

The TC2384 is a high performance field effect transistor housed in a ceramic micro-x package with TC1304

PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device

be suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.

ELECTRICAL SPECIFICATIONS (TA=25

°°°°C)

Symbol

Conditions

MIN

TYP

MAX

UNIT

NF

Noise Figure at VDS = 4 V, IDS = 50 mA, f

= 12GHz

0.9

1.2

dB

Ga

Associated Gain at VDS = 4 V, IDS = 50 mA, f

= 12GHz

7.5

9

dB

P1dB

Output Power at 1dB Gain Compression Point, f

= 12GHz VDS = 6 V, IDS = 80 mA

23.5

24.5

dBm

GL

Linear Power Gain, f

= 12GHz VDS = 6 V, IDS = 80 mA

9

10

dB

IDSS

Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V

180

mA

gm

Transconductance at VDS = 2 V, VGS = 0 V

200

mS

VP

Pinch-off Voltage at VDS = 2 V, ID = 1.2mA

-1.0*

Volts

BVDGO

Drain-Gate Breakdown Voltage at IDGO = 0.3mA

9

12

Volts

Rth

Thermal Resistance

75

°C/W

ABSOLUTE MAXIMUM RATINGS (TA=25

°°°°C)

TYPICAL NOISE PARAMETERS (TA=25

°°°°C)

VDS = 4 V, IDS = 50 mA

Symbol

Parameter

Rating

VDS

Drain-Source Voltage

7.0 V

VGS

Gate-Source Voltage

-3.0 V

IDS

Drain Current

IDSS

IGS

Gate Current

600

µA

RF Input Power, CW

24 dBm

PT

Continuous Dissipation

800 mW

TCH

Channel Temperature

175

°C

TSTG

Storage Temperature

- 65

°C to +175 °C

Γopt

Frequency

(GHz)

NFopt

(dB)

GA

(dB)

MAG

ANG

Rn/50

2

0.36

19.7

0.80

15

0.28

4

0.48

16.6

0.67

39

0.18

6

0.59

14.3

0.56

64

0.15

8

0.70

12.7

0.49

92

0.12

10

0.82

11.7

0.46

120

0.09

12

0.93

10.9

0.45

148

0.06

14

1.05

10.4

0.46

174

0.04

16

1.16

9.8

0.47

-162

0.04

18

1.27

9.0

0.48

-141

0.07

* For the tight control of the pinch-off voltage range, we divide TC2384 into 3 model numbers to fit customer design requirement

(1)TC2384P0710 : Vp = -0.7V to -1.0V (2)TC2384P0811 : Vp = -0.8V to -1.1V (3)TC2384P0912 : Vp = -0.9V to -1.2V

If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.

유사한 부품 번호 - TC2384

제조업체	부품명	데이터시트	상세설명
Transcom, Inc.	TC2381	279Kb / 4P	Low Noise and Medium Power Packaged GaAs FETs

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유사한 설명 - TC2384

제조업체	부품명	데이터시트	상세설명
Transcom, Inc.	TC2381	279Kb / 4P	Low Noise and Medium Power Packaged GaAs FETs
	TC1201	251Kb / 6P	Low Noise and Medium Power GaAs FETs
	TC1201V	122Kb / 2P	Low Noise and Medium Power GaAs FETs
	TC1101V	90Kb / 2P	Low Noise and Medium Power GaAs FETs
	TC1301	251Kb / 6P	Low Noise and Medium Power GaAs FETs
List of Unclassifed Man...	TC1301	206Kb / 6P	Low Noise and Medium Power GaAs FETs
Transcom, Inc.	TC1304	261Kb / 6P	Low Noise and Medium Power GaAs FETs
List of Unclassifed Man...	TC1101	154Kb / 6P	Low Noise and Medium Power GaAs FETs
Transcom, Inc.	TC1101	250Kb / 5P	Low Noise and Medium Power GaAs FETs
Transcom, Inc.	TC1304V	71Kb / 2P	Low Noise and Medium Power GaAs FETs

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TC2384 데이터시트(PDF) 1 Page - Transcom, Inc.

TC2384 데이터시트(HTML) 1 Page - Transcom, Inc.

유사한 부품 번호 - TC2384

유사한 설명 - TC2384

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