TPC8406-H datasheet(10/11 Pages) TOSHIBA

부품명	TPC8406-H

상세설명	Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel竊뢓-Channel Ultra-High-Speed U-MOSIII)

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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10 / 11 page

TPC8406-H

2009-09-29

10

N-Channel

rth – tw

Pulse width tw (s)

1

0.001

10

100

1000

0.01

0.1

1

10

100

1000

0.1

Safe operating area

Drain-source voltage VDS (V)

0.1

100

1

10

100

10

0.1

1

単発パルス

(3)

(2)

(4)

(1)

VDSS max

* Single - pulse

Ta

= 25°C

Curves must be derated linearly

with increase in temperature.

1 ms *

ID max (Pulse) *

10 ms *

Single-device value at dual

operation (Note 3b)

Single - pulse

Device mounted on a glass-epoxy board (a) (Note 2a)

(1)Single-device operation (Note 3a)

(2)Single-device value at dual operation (Note 3b)

Device mounted on a glass-epoxy board (b) (Note 2b)

(3)Single-device operation (Note 3a)

(4)Single-device value at dual operation (Note 3b)

유사한 부품 번호 - TPC8406-H

제조업체	부품명	데이터시트	상세설명
VBsemi Electronics Co.,...	TPC8406-H	2Mb / 14P	N- and P-Channel 60-V (D-S) MOSFET

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유사한 설명 - TPC8406-H

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TPC8406-H 데이터시트(PDF) 10 Page - Toshiba Semiconductor

TPC8406-H 데이터시트(HTML) 10 Page - Toshiba Semiconductor

유사한 부품 번호 - TPC8406-H

유사한 설명 - TPC8406-H

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