전자부품 데이터시트 검색엔진 |
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TPCF8402 데이터시트(PDF) 9 Page - Toshiba Semiconductor |
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TPCF8402 데이터시트(HTML) 9 Page - Toshiba Semiconductor |
9 / 11 page TPCF8402 2009-09-29 9 N-channel Ambient temperature Ta (°C) RDS (ON) – Ta Drain-source voltage VDS (V) IDR – VDS 0 0.1 Common source Ta = 25°C Pulse test -0.2 0.3 0.5 1 3 5 10 -0.6 -0.8 -1.2 VGS = 0 V 5.0 3.0 1.0 10 -0.4 -1.0 160 −40 0 40 80 120 −80 Common source Pulse test 120 80 40 0 ID = 4A 2A VGS = 10V VGS = 4.5V ID = 4, 2, 1A 1A 100 60 20 Drain-source voltage VDS (V) Capacitance – VDS Ambient temperature Ta (°C) Vth – Ta 0 1 3 −80 −40 0 40 80 120 160 Common source VDS = 10 V ID = 1mA Pulse test 2 0.1 1 10 100 1000 1 3 5 10 30 50 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C Ciss Coss Crss 0.3 Ambient temperature Ta (°C) PD – Ta 2.0 0.8 0 0 40 80 120 160 0.4 1.2 1.6 200 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t= 5s (1) (2) (3) (4) total gate charge Qg (nC) Dynamic input/output characteristics 0 4 8 Common source ID = 4.0A Ta = 25°C Pulse test VDD = 24V VDS VGS 12 16 20 10 0 15 10 0 5 15 12 6 24 12 VDD = 6V 5 30 25 |
유사한 부품 번호 - TPCF8402_09 |
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유사한 설명 - TPCF8402_09 |
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