SSFP5N60 datasheet(2/2 Pages) GOOD-ARK

부품명	SSFP5N60

상세설명	StarMOST Power MOSFET

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SSFP5N60

StarMOS

T Power MOSFET

Electrical Characteristics @TJ=25

ْC(unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

Test Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

600

—

V

VGS=0V,ID=250

μA

△V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient

—

0.6

—

V/

ْC Reference to 25ْC,ID=250μA

RDS(on)

Static Drain-to-Source On-resistance

—

2.0

2.5

Ω VGS=10V,ID=2.25A ④

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS=VGS,ID=250

μA

gfs

Forward Transconductance

—

4.7

—

S

VDS=40V,ID=2.25A

—

1

VDS=600V,VGS=0V

IDSS

Drain-to-Source Leakage current

—

10

μA

VDS=480V,VGS=0V,TJ=150

ْC

Gate-to-Source Forward leakage

—

100

VGS=30V

IGSS

Gate-to-Source Reverse leakage

—

-100

nA

VGS=-30V

Qg

Total Gate Charge

—

15

19

Qgs

Gate-to-Source charge

—

2.5

—

Qgd

Gate-to-Drain("Miller") charge

—

6.6

—

nC

ID=4.5A

VDS=480V

VGS=10V

td(on)

Turn-on Delay Time

—

10

30

tr

Rise Time

—

42

90

td(off)

Turn-Off Delay Time

—

38

85

tf

Fall Time

—

46

100

nS

VDD=300V

ID=4.5A

RG=25

Ω

LD

Internal Drain Inductance

—

4.5

—

LS

Internal Source Inductance

—

7.5

—

nH

Between lead,

6mm(0.25in.)

from

package

and center of

die contact

Ciss

Input Capacitance

—

515

670

Coss

Output Capacitance

—

55

72

Crss

Reverse Transfer Capacitance

—

6.5

8.5

pF

VGS=0V

VDS=25V

f

=1.0MHZ

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Test Conditions

IS

Continuous Source Current

.

(Body Diode)

—

4.5

ISM

Pulsed Source Current

.

(Body Diode)

①

—

18

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

VSD

Diode Forward Voltage

—

1.4

V

TJ=25

ْC,IS=4.5A,VGS=0V ④

trr

Reverse Recovery Time

—

300

—

nS

Qrr

Reverse Recovery Charge

—

2.2

nC

TJ=25

ْC,IF=4.5A

di/dt=100A/

μs ④

ton

Forward Turn-on Time

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Notes:

① Repetitive rating;pulse width limited by

③ ISD≤4.5A,di/dt≤200A/μS,VDD≤V(BR)DSS,

max.junction temperature(see figure 11)

TJ≤25

ْ C

② L = 18.9mH, IAS =4.5 A, VDD = 50V,

④ Pulse width≤300μS; duty cycle≤2%

RG = 25

∧, Starting TJ = 25°C

2

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