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NP0640SAMCT3G 데이터시트(PDF) 4 Page - ON Semiconductor

부품명 NP0640SAMCT3G
부품 상세설명  50A, Ultra Low Capacitance TSPD
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
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NP0640SAMCT3G 데이터시트(HTML) 4 Page - ON Semiconductor

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NP−SAMC Series
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ELECTRICAL PARAMETER/RATINGS DEFINITIONS
Symbol
Parameter
VDRM
Repetitive Peak Off−state Voltage
V(BO)
Breakover Voltage
IDRM
Off−state Current
I(BO)
Breakover Current
IH
Holding Current
VT
On−state Voltage
IT
On−state Current
ITSM
Nonrepetitive Peak On−state Current
IPPS
Nonrepetitive Peak Impulse Current
VD
Off−state Voltage
ID
Off−state Current
Figure 1. Voltage Current Characteristics of TSPD
VT
IPPS
ITSM
IT
ID
IH
−Voltage
+Voltage
−I
+I
I(BO)
IDRM
VD
V(BO)
VDRM
Off−State Region
TIME (ms)
0
50
0
100
tr = rise time to peak value
tf = decay time to half value
tr
tf
Peak
Value
Half Value
1
10
100
0.1
1
10
100
1000
Figure 2. Nonrepetitive On−State Current vs. Time
(ITSM)
Figure 3. Nonrepetitive On−State Impulse vs.
Waveform (IPPS)
CURRENT DURATION (s)
Detailed Operating Description
The TSPD or Thyristor Surge Protection Device are
specialized silicon based overvoltage protectors, used to
protect sensitive electronic circuits from damaging
overvoltage transient surges caused by induced lightning
and powercross conditions.
The TSPD protects by switching to a low on state voltage
when the specified protection voltage is exceeded. This is
known as a “crowbar” effect. When an overvoltage occurs,
the crowbar device changes from a high−impedance to a
low−impedance state. This low−impedance state then offers
a path to ground, shunting unwanted surges away from the
sensitive circuits.
This crowbar action defines the TSPD’s two states of
functionality: Open Circuit and Short Circuit.
Open Circuit – The TSPD must remain transparent during
normal circuit operation. The device looks like an open
across the two wire line.
Short Circuit – When a transient surge fault exceeds the
TSPD protection voltage threshold, the devices switches on,


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