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1N3295 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Naina Semiconductor ltd.

๋ถ€ํ’ˆ๋ช… 1N3295
์ƒ์„ธ๋‚ด์šฉ  SILICON POWER DIODE
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์ œ์กฐ์‚ฌ  NAINA [Naina Semiconductor ltd.]
ํ™ˆํŽ˜์ด์ง€  http://www.nainasemi.com
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1N3295 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Naina Semiconductor ltd.

   
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NAINA
DO - 8
FEATURES
โ€ข Diffused Series
โ€ข Available in Normal & Reverse Polarity
โ€ข Industrial Grade
โ€ข Available In Avalanche Characteristic
ELECTRICALSPECIFICATIONS
I
F
Maximum Average Forward
100A
Current Te=1250C
VFM
Maximum peak forward
1.5V
voltage drop @ Rated IF(AV)
I
FSM
Maximum peak one cycle
2200A
(non-rep) surge current 10 m sec
I
FRM
Maximum peak repetitive
500 A
surge current
I2t
Maximum I2t rating (non-rep.) for
24000 A2 Sec
5 to 10 msec.
1N3288-1N3297
SILICON POWER DIODE
THERMALMECHANICAL SPECIFICATIONS
ฮธฮธฮธฮธฮธJC
Maximum thermal resistance Junction to case
0.400C/W
Tj
Operating Junction Temp.
-650C to 1500C
Tstg
Storage temperature
-650C to 2000C
Mounting torque
2.0 M-kg min,
(Non-lubricated threads)
3.0 M-kg max
W
Approx, weight
150 gms.
ELECTRICAL RATINGS
TYPE
1N32881N3289 1N32901N3291 1N3292 1N3293 1N32941N3295IN3296
VRRM
Max. repetitive peak reverse
100
200
300
400
500
600
800
1000 1200
voltage (v)
VR(RMS) Max. R.M.S. reverse voltage(V)
70
140
210
280
350
420
560
700
840
VR
Max. D.C. Blocking Voltage (V)
100
200
300
400
500
600
800
1000 1200
Recommended R.M.S. working
40
80
120
160
200
240
320
400
480
Voltage(v)
IR(AV)
Max. Average reverse leakage
200
200
200
200
200
200
200
200
200
current @ VRRM Tc 250C (uA)
NAINA SEMICONDUCTOR LTD.,
D-95 ,SECTOR -63 NOIDA(INDIA)
e-mail:sales@nainasemi.com, web site: www.nainasemi.com


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