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MTBA5N10J3 데이터시트(PDF) 1 Page - Cystech Electonics Corp. |
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MTBA5N10J3 데이터시트(HTML) 1 Page - Cystech Electonics Corp. |
1 / 7 page CYStech Electronics Corp. Spec. No. : C731J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 MTBA5N10J3 CYStek Product Specification N -Channel Logic Level Enhancement Mode Power MOSFET MTBA5N10J3 BVDSS 100V ID 10A 150mΩ RDSON(MAX) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package Equivalent Circuit Outline Absolute Maximum Ratings (TC=25 °C, unless otherwise noted) MTBA5N10J3 TO-252 G D S G:Gate D:Drain S:Source Parameter Symbol Limits Unit Drain-Source Voltage VDS 100 VGS ± 30 V Gate-Source Voltage ID 10 Continuous Drain Current @ TC=25 °C ID 7 Continuous Drain Current @ TC=100 °C Pulsed Drain Current *1 IDM 40 IAS 12 A Avalanche Current Avalanche Energy @ L=0.1mH, ID=12A, RG=25Ω EAS 7.2 Repetitive Avalanche Energy @ L=0.05mH *2 EAR 3.6 mJ Total Power Dissipation @TC=25℃ 35 Pd W Total Power Dissipation @TC=100℃ 15 Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 °C Note : *1 . Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% |
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