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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TSB1184ACPRO 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSB1184ACPRO 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page  TSB1184A Low Vcesat PNP Transistor 1/4 Version: A08 TO-252 (DPAK) PRODUCT SUMMARY BVCBO -50V BVCEO -50V IC -3A VCE(SAT) -0.3V @ IC / IB = -2A / -100mA Features ● Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) ● Excellent DC current gain characteristics Structure ● Epitaxial Planar Type ● PNP Silicon Transistor Ordering Information Part No. Package Packing TSB1184ACP RO TO-252 2.5Kpcs / 13” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V DC -3 Collector Current Pulse IC -7 (note) A Ta=25ºC 1 Collector Power Dissipation Tc=25ºC PD 5 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: Single pulse, Pw=10ms Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50uA, IE = 0 BVCBO -50 -- -- V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 BVCEO -50 -- -- V Emitter-Base Breakdown Voltage IE = -50uA, IC = 0 BVEBO -6 -- -- V Collector Cutoff Current VCB = -40V, IE = 0 ICBO -- -- -1 uA Emitter Cutoff Current VEB = -4V, IC = 0 IEBO -- -- -1 uA Collector-Emitter Saturation Voltage IC / IB = -2A / -200mA *VCE(SAT) -- -0.3 -0.5 V DC Current Transfer Ratio VCE = -2V, IC = -100mA *hFE 120 -- 560 Transition Frequency VCE =-5V, IC=-100mA, f=30MHz fT -- 80 -- MHz Output Capacitance VCB = -10V, f=1MHz Cob -- 55 -- pF * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% Pin Definition: 1. Base 2. Collector 3. Emitter |
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