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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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UTCML1225 데이터시트(HTML) 1 Page - Unisonic Technologies |
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UTCML1225 데이터시트(HTML) 1 Page - Unisonic Technologies |
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XL/ML1225 SCR UTC UNISONIC TECHNOLOGIES CO. LTD 1 DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. TO-92 1 1:CATHODE 2:GATE 3:ANODE ABSOLUTE MAXIMUM RATINGS ( Ta=25 °C ,unless otherwise specified ) PARAMETERS PART NO. SYMBOL TEST CONDITION MIN. RATING MAX. RATING UNITS Repetitive Peak Off-State Voltage XL1225 ML1225 VDRM VDRM Tj=40 to 125 °C (rgk=1k Ω) 400 300 V On-State Current IT(RMS) Tc=40 °C 0.8 A Average On-State Current IT(AV) Half Cycle=180, Tc=40 °C 0.5 A Peak Reverse Gate Voltage VGRM IGR=10uA 1 V Peak Gate Current IGM 10us Max. 0.1 A Gate Dissipation PG(AV) 20ms Max. 150 W Operating Temperature Tj -40 125 °C Storage Temperature TSTG -40 125 °C Soldering Temperature TSLD 1.6mm from case 10s Max. 250 °C ELECTRICAL CHARACTERISTICS(Ta=25 °C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNIT Off state leakage current IDRM @VDRM(RGK=1K Ω), Tj=125°C 0.1 mA Off state leakage current IDRM @VDRM(RGK=1K Ω), Tj=25°C 1.0 µA On state voltage VT AT IT=0.4A AT IT=0.8A 1.4 2.2 V On state threshold voltage VT(TO) Tj=125 °C 0.95 V On state slops resistance Rt Tj=125 °C 600 m Gate trigger current IGT VD=7V 200 µA Gate trigger voltage VGT VD=7V 0.8 V Holding current IH RGK=1K Ω 5 mA Latching current IL RGK=1K Ω 6 mA Critical rate of voltage rise DV/DT VD=0.67*VDRM(RGK=1K Ω), Tj=125 °C V/ µs Critical rate of current rise DV/DT IG=10mA, dIG/dt=0.1A/ µs, Tj=125 °C A/ µs Gate controlled delay time TGD IG=10mA, dIG/dt=0.1A/ µs, 500 µs Commutated turn-off time TG Tj=85 °C, VD=0.67*VDRM, VR=35V, IT=IT(AV) 200 µs |
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