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UTCML1225 데이터시트(HTML) 1 Page - Unisonic Technologies

부품명 UTCML1225
상세내용  The XL1225/ML1225 silicon controlled rectifiers
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제조사  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
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UTCML1225 데이터시트(HTML) 1 Page - Unisonic Technologies

   
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XL/ML1225
SCR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
DESCRIPTION
The XL1225/ML1225 silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts
are intended for low cost high volume applications.
TO-92
1
1:CATHODE
2:GATE
3:ANODE
ABSOLUTE MAXIMUM RATINGS ( Ta=25
°C ,unless otherwise specified )
PARAMETERS
PART NO.
SYMBOL
TEST
CONDITION
MIN.
RATING
MAX.
RATING
UNITS
Repetitive Peak Off-State Voltage
XL1225
ML1225
VDRM
VDRM
Tj=40 to 125
°C
(rgk=1k
Ω)
400
300
V
On-State Current
IT(RMS)
Tc=40
°C
0.8
A
Average On-State Current
IT(AV)
Half Cycle=180,
Tc=40
°C
0.5
A
Peak Reverse Gate Voltage
VGRM
IGR=10uA
1
V
Peak Gate Current
IGM
10us Max.
0.1
A
Gate Dissipation
PG(AV)
20ms Max.
150
W
Operating Temperature
Tj
-40
125
°C
Storage Temperature
TSTG
-40
125
°C
Soldering Temperature
TSLD
1.6mm from case
10s Max.
250
°C
ELECTRICAL CHARACTERISTICS(Ta=25
°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
Off state leakage current
IDRM
@VDRM(RGK=1K
Ω), Tj=125°C
0.1
mA
Off state leakage current
IDRM
@VDRM(RGK=1K
Ω), Tj=25°C
1.0
µA
On state voltage
VT
AT IT=0.4A
AT IT=0.8A
1.4
2.2
V
On state threshold voltage
VT(TO)
Tj=125
°C
0.95
V
On state slops resistance
Rt
Tj=125
°C
600
m
Gate trigger current
IGT
VD=7V
200
µA
Gate trigger voltage
VGT
VD=7V
0.8
V
Holding current
IH
RGK=1K
5
mA
Latching current
IL
RGK=1K
6
mA
Critical rate of voltage rise
DV/DT
VD=0.67*VDRM(RGK=1K
Ω),
Tj=125
°C
V/
µs
Critical rate of current rise
DV/DT
IG=10mA, dIG/dt=0.1A/
µs,
Tj=125
°C
A/
µs
Gate controlled delay time
TGD
IG=10mA, dIG/dt=0.1A/
µs,
500
µs
Commutated turn-off time
TG
Tj=85
°C, VD=0.67*VDRM,
VR=35V, IT=IT(AV)
200
µs


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