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VG26VS17400E 데이터시트(PDF) 1 Page - Vanguard International Semiconductor |
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VG26VS17400E 데이터시트(HTML) 1 Page - Vanguard International Semiconductor |
1 / 25 page Document : 1G5-0142 Rev.1 Page 1 VIS VG26(V)(S)17400E 4,194,304 x 4 - Bit CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported and very slow CBR cycles are being performed. It is packaged in JEDEC standard 26/24 - pin plastic SOJ or TSOP (II). Features • Single 5V ( %) or 3.3V ( %) only power supply • High speed tRAC access time : 50/60 ns • Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.) - Standby mode : 5V version 1.375 mW (Max.) 3.3V version 0.54 mW (Max.) • Fast Page Mode access • I/O level : TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V) • 2048 refresh cycles in 32 ms (Std) or 128ms (S - version) • 4 refresh mode : - RAS only refresh - CAS-before-RAS refresh - Hidden refresh - Self - refresh (S - version) 10 ± 10 ± |
유사한 부품 번호 - VG26VS17400E |
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유사한 설명 - VG26VS17400E |
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