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SS6781BGSTR 데이터시트(PDF) 4 Page - Silicon Standard Corp. |
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SS6781BGSTR 데이터시트(HTML) 4 Page - Silicon Standard Corp. |
4 / 20 page 01/31/2008 Rev.1.00 www.SiliconStandard.com 4 SS6781B ELECTRICAL CHARACTERISTICS (T A=25°C, VCC=5V, unless otherwise specified.) (Note1) PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Supply Voltage VCC 4.5 5.0 5.5 V Supply Current ICC 1.1 mA Battery Low During Initial Timer 0.11 0.16 0.21 After Initial Timer (SEL3>3V) 0.63 0.69 0.75 (SEL3<2V) 1.1 1.2 1.30 Battery High (SEL3>3V) 2.6 2.7 2.80 Voltage Protection Limit (SEL3<2V) VBT 1.9 2.0 2.10 V Temperature High 1.35 1.45 1.55 Temperature Sense Limit Temperature Low VTS 3.5 3.6 3.70 V Output impedance of DIS Pin ZDIS 50 100 Ω LED1, LED2, ICON pins Output Impedance ON OFF 1 25 50 Ω MΩ Source Current Capability SEL3 pin DSW pin ISEL3 IDSW 5.5 90 µ A MODE, PEAK, SEL1, SEL2 pins 300 kΩ Input Impedance VBT, VTS, ADJ pins 1 MΩ Recommended External Resistor of TMR pin RTMR 0.9 5.1 27 kΩ Battery Charge Current (Note2, Note3, Note4) Temperature detective function is enabled. Battery’s type is GP180AAHC 0.25 0.8 1 C -∆V Detection Level w.r.t. Peak Value -0.25 % * w.r.t.: with respect to |
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