74AUP1G38_3

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 03 — 22 June 2009

4 of 15

NXP Semiconductors

74AUP1G38

Low-power 2-input NAND gate (open drain)

8.

Limiting values

[1]

The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.

[2]

For TSSOP5 packages: above 87.5

°C the value of P

For XSON6 packages: above 118

°C the value of P

9.

Recommended operating conditions

10. Static characteristics

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

Min

Max

Unit

supply voltage

−0.5

+4.6

V

input clamping current

−50

-

mA

input voltage

[1]

−0.5

+4.6

V

output clamping current

−50

-

mA

output voltage

Active mode and Power-down mode

[1]

−0.5

+4.6

V

output current

-

+20

mA

supply current

-

+50

mA

ground current

−50

-

mA

storage temperature

−65

+150

°C

total power dissipation

[2] -

250

mW

Table 6.

Recommended operating conditions

Symbol

Parameter

Conditions

Min

Max

Unit

supply voltage

0.8

3.6

V

input voltage

0

3.6

V

output voltage

Active mode and Power-down mode

0

3.6

V

ambient temperature

−40

+125

°C

∆t/∆V

input transition rise and fall rate

0

200

ns/V

Table 7.

Static characteristics

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

Min

Typ

Max

Unit

HIGH-level input voltage

0.70

V

0.65

V

1.6

-

-

V

2.0

-

-

V

LOW-level input voltage

-

-

0.30

× V

CC

V

-

-

0.35

× V

CC

V

-

-

0.7

V

-

-

0.9

V