74AUP1T45GW datasheet(5/33 Pages) NXP

부품명	74AUP1T45GW

상세설명	Low-power dual supply translating transceiver; 3-state

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74AUP1T45_2

Product data sheet

Rev. 02 — 3 August 2009

5 of 33

NXP Semiconductors

74AUP1T45

Low-power dual supply translating transceiver; 3-state

10. Static characteristics

Table 7.

Static characteristics

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Tamb = 25 °C

VIH

HIGH-level input

voltage

data input

[1][3]

VCCI = 1.1 V to 1.95 V

0.65

× V

CCI

--

V

VCCI = 2.3 V to 2.7 V

1.6

-

V

VCCI = 3.0 V to 3.6 V

2.0

-

V

DIR input

[1][4]

VCCI = 1.1 V to 1.95 V

0.65

× V

CC(A) --

V

VCCI = 2.3 V to 2.7 V

1.6

-

V

VCCI = 3.0 V to 3.6 V

2.0

-

V

VIL

LOW-level input

voltage

data input

[1][3]

VCCI = 1.1 V to 1.95 V

-

0.35

× VCCI

V

VCCI = 2.3 V to 2.7 V

-

0.7

V

VCCI = 3.0 V to 3.6 V

-

0.9

V

DIR input

[1][4]

VCCI = 1.1 V to 1.95 V

-

0.35

× VCC(A) V

VCCI = 2.3 V to 2.7 V

-

0.7

V

VCCI = 3.0 V to 3.6 V

-

0.9

V

VOH

HIGH-level

output voltage

VI = VIH

IO = −20 µA;

VCC(A) =VCC(B) = 1.1 V to 3.6 V

[2] VCCO − 0.1

-

V

IO = −1.1 mA; VCC(A) = VCC(B) = 1.1 V

[2] 0.75

× VCCO --

V

IO = −1.7 mA; VCC(A) = VCC(B) = 1.4 V

1.11

-

V

IO = −1.9 mA; VCC(A) = VCC(B) = 1.65 V

1.32

-

V

IO = −2.3 mA; VCC(A) = VCC(B) = 2.3 V

2.05

-

V

IO = −3.1 mA; VCC(A) = VCC(B) = 2.3 V

1.9

-

V

IO = −2.7 mA; VCC(A) = VCC(B) = 3.0 V

2.72

-

V

IO = −4.0 mA; VCC(A) = VCC(B) = 3.0 V

2.6

-

V

VOL

LOW-level output

voltage

VI = VIL

IO = 20 µA; VCC(A) =VCC(B) = 1.1 V to 3.6 V

-

0.1

V

IO = 1.1 mA; VCC(A) = VCC(B) = 1.1 V

[2] -

-

0.3

× VCCO

V

IO = 1.7 mA; VCC(A) = VCC(B) = 1.4 V

-

0.31

V

IO = 1.9 mA; VCC(A) = VCC(B) = 1.65 V

-

0.31

V

IO = 2.3 mA; VCC(A) = VCC(B) = 2.3 V

-

0.31

V

IO = 3.1 mA; VCC(A) = VCC(B) = 2.3 V

-

0.44

V

IO = 2.7 mA; VCC(A) = VCC(B) = 3.0 V

-

0.31

V

IO = 4.0 mA; VCC(A) = VCC(B) = 3.0 V

-

0.44

V

II

input leakage

current

DIR input; VI = GND to VCC(A);

VCC(A) =VCC(B) = 1.1 V to 3.6 V

--

±0.1

µA

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