BAT854AW datasheet(3/7 Pages) NXP

부품명	BAT854AW

상세설명	Schottky barrier (double) diodes

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제조업체	NXP [NXP Semiconductors]

홈페이지	http://www.nxp.com

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3 / 7 page

2001 Feb 27

3

NXP Semiconductors

Product data sheet

Schottky barrier (double) diodes

BAT854W series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C; unless otherwise specified.

Note

1.

Pulse test: tp = 300 μs; δ = 0.02.

THERMAL CHARACTERISTICS

Note

1.

Refer to SOT323 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

VR

continuous reverse voltage

−

40

V

IF

continuous forward current

−

200

mA

IFRM

repetitive peak forward current

tp ≤ 1 s; δ ≤ 0.5

−

300

mA

IFSM

non-repetitive peak forward current

t = 8.3 ms half sinewave;

JEDEC method

−

1

A

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Per diode

VF

continuous forward voltage

see Fig.6

IF = 0.1 mA

200

−

mV

IF = 1 mA

260

−

mV

IF = 10 mA

340

−

mV

IF = 30 mA

−

420

mV

IF = 100 mA

−

550

mV

IR

continuous reverse current

VR = 25 V; note 1; see Fig.7

−

0.5

μA

Cd

diode capacitance

VR = 1 V; f = 1 MHz; see Fig.8

−

20

pF

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient note 1

625

K/W

유사한 부품 번호 - BAT854AW

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NXP Semiconductors	BAT854AW	56Kb / 8P	Schottky barrier (double) diodes 2001 Feb 27
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