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BCP55 데이터시트(PDF) 10 Page - NXP Semiconductors |
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BCP55 데이터시트(HTML) 10 Page - NXP Semiconductors |
10 / 15 page BC637_BCP55_BCX55_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 25 June 2007 10 of 15 NXP Semiconductors BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistors VCE =2V (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C Fig 10. DC current gain as a function of collector current; typical values Fig 11. Collector current as a function of collector-emitter voltage; typical values VCE =2V (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 150 °C IC/IB =10 (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −55 °C Fig 12. Base-emitter voltage as a function of collector current; typical values Fig 13. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa080 100 200 300 hFE 0 IC (mA) 10−1 104 103 1102 10 (1) (2) (3) VCE (V) 0 2.0 1.6 0.8 1.2 0.4 006aaa084 0.8 0.4 1.2 1.6 IC (A) 0 25 20 15 10 5 IB (mA) = 50 45 40 35 30 006aaa081 0.4 0.8 1.2 VBE (V) 0 IC (mA) 10−1 104 103 1102 10 (1) (2) (3) 006aaa082 10−1 1 VCEsat (V) 10−2 IC (mA) 10−1 104 103 1102 10 (1) (2) (3) |
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