BC807DS datasheet(3/7 Pages) NXP

부품명	BC807DS

상세설명	PNP general purpose double transistor

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제조업체	NXP [NXP Semiconductors]

홈페이지	http://www.nxp.com

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3 / 7 page

2002 Nov 22

3

NXP Semiconductors

Product data sheet

PNP general purpose double transistor

BC807DS

THERMAL CHARACTERISTICS

Note

1.

Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Notes

1.

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

2.

VBE decreases by approximately −2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to

ambient

note 1

208

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector-base cut-off current

VCB = −20 V; IE = 0

−

−100

nA

VCB = −20 V; IE = 0; Tj = 150 °C

−

−5

μA

IEBO

emitter-base cut-off current

VEB = −5 V; IC = 0

−

−100

nA

hFE

DC current gain

VCE = −1 V; IC = −100 mA; note 1

160

−

400

VCE = −1 V; IC = −500 mA; note 1

40

−

VCEsat

collector-emitter saturation voltage IC = −500 mA; IB = −50 mA; note 1

−

−700

mV

VBE

base-emitter voltage

VCE = −1 V; IC = −500 mA;

notes 1 and 2

−

−1.2

V

Cc

collector capacitance

VCB = −10 V; IE = Ie = 0; f = 1 MHz

−

9

−

pF

fT

transition frequency

VCE = −5 V; IC = −10 mA;

f = 100 MHz

80

−

MHz

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BC807DS 데이터시트(PDF) 3 Page - NXP Semiconductors

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