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BC817DPN 데이터시트(PDF) 3 Page - NXP Semiconductors

부품명 BC817DPN
상세설명  NPN/PNP general purpose transistor
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제조업체  NXP [NXP Semiconductors]
홈페이지  http://www.nxp.com
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BC817DPN 데이터시트(HTML) 3 Page - NXP Semiconductors

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2002 Nov 22
3
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistor
BC817DPN
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Notes
1.
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2.
VBE decreases by approximately −2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
note 1
208
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
VCB = 20 V; IE = 0
100
nA
VCB = 20 V; IE = 0; Tj = 150 °C
5
μA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
100
nA
hFE
DC current gain
VCE = 1 V; IC = 100 mA; note 1
160
400
VCE = 1 V; IC = 500 mA; note 1
40
VCEsat
collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1
700
mV
VBE
base-emitter voltage
VCE = 1 V; IC = 500 mA;
notes 1 and 2
1.2
V
NPN transistor
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
5
pF
fT
transition frequency
VCE = 5 V; IC = 10 mA;
f = 100 MHz
100
MHz
PNP transistor
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1 MHz
9
pF
fT
transition frequency
VCE = −5 V; IC = −10 mA;
f = 100 MHz
80
MHz


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