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BC846DS 데이터시트(PDF) 6 Page - NXP Semiconductors |
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BC846DS 데이터시트(HTML) 6 Page - NXP Semiconductors |
6 / 12 page BC846DS_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 6 of 12 NXP Semiconductors BC846DS 65 V, 100 mA NPN/NPN general-purpose transistor VCE =5V; Tamb =25 °CIC/IB =20 (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 100 °C Fig 5. Per transistor: Base-emitter voltage as a function of collector current; typical values Fig 6. Per transistor: Base-emitter saturation voltage as a function of collector current; typical values IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C VCE =5V; Tamb =25 °C Fig 7. Per transistor: Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Per transistor: Transition frequency as a function of collector current; typical values 006aaa536 0.6 0.8 1 VBE (V) 0.4 IC (mA) 10−1 103 102 110 006aaa534 IC (mA) 10−1 103 102 110 0.5 0.9 1.3 0.3 0.7 1.1 VBEsat (V) 0.1 (1) (2) (3) 006aaa535 1 10−1 10 VCEsat (V) 10−2 IC (mA) 10−1 103 102 110 (1) (2) (3) 006aaa537 IC (mA) 1102 10 102 103 fT (MHz) 10 |
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