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BC856A 데이터시트(PDF) 7 Page - NXP Semiconductors |
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BC856A 데이터시트(HTML) 7 Page - NXP Semiconductors |
7 / 10 page 2004 Jan 16 7 NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 handbook, halfpage 0 400 600 800 1000 hFE 200 MGT719 −10−2 −10−1 −1 −10 −102 −103 IC (mA) (1) (2) (3) Fig.10 DC current gain as a function of collector current; typical values. BC857C; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. handbook, halfpage 0 −1200 −1000 −800 −600 −400 −200 MGT720 −10−1 −1 −10 −102 −103 IC (mA) VBE (mV) (1) (2) (3) Fig.11 Base-emitter voltage as a function of collector current; typical values. BC857C; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. handbook, halfpage −104 −103 −102 −10 MGT721 −10−1 −1 −10 −102 −103 IC (mA) VCEsat (mV) (1) (2) (3) Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. BC857C; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. handbook, halfpage MGT722 −10−1 −1 −10 −102 −103 IC (mA) 0 −1200 −1000 −800 −600 −400 −200 VBEsat (mV) (1) (2) (3) Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. BC857C; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. |
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