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BF621 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BF621 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 10 page 2004 Dec 14 3 NXP Semiconductors Product data sheet PNP high-voltage transistors BF621; BF623 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF621 − −300 V BF623 − −250 V VCEO collector-emitter voltage open base BF621 − −300 V BF623 − −250 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −50 mA ICM peak collector current − −100 mA IBM peak base current − −50 mA Ptot total power dissipation Tamb ≤ 25 °C note 1 − 0.5 W note 2 − 0.8 W note 3 − 1.1 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C |
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