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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BF904AWR 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BF904AWR 데이터시트(HTML) 3 Page - NXP Semiconductors |
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3 / 15 page  NXP Semiconductors Product specification N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature of the soldering point of the source lead. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 7V ID drain current − 30 mA IG1 gate 1 current −±10 mA IG2 gate 2 current −±10 mA Ptot total power dissipation Ts ≤ 110 °C; note 1; see Fig.4 − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Fig.4 Power derating curve. handbook, halfpage 0 50 100 200 250 0 200 MGL615 150 150 100 50 Ptot (mW) Ts (°C) Rev. 04 - 13 November 2007 3 of 15 |
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