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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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ZTX956 데이터시트(PDF) 2 Page - Zetex Semiconductors |
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ZTX956 데이터시트(HTML) 2 Page - Zetex Semiconductors |
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2 / 3 page  PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 JUNE 94 FEATURES * 2 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 2 Amps * Spice model available ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -220 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -5 A Continuous Collector Current IC -2 A Practical Power Dissipation* Ptotp 1.58 W Power Dissipation at Tamb=25°C Ptot 1.2 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -220 -300 V IC=-100µA Collector-Emitter Breakdown Voltag V(BR)CER -220 -300 V IC=-1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO -200 -240 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -6 -8 V IE=-100µA Collector Cut-Off Current ICBO -50 -1 nA µ A VCB=-200V VCB=-200V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ -50 -1 nA µ A VCB=-200V VCB=-200V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -30 -110 -150 -50 -150 -250 mV mV mV IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-400mA* Base-Emitter Saturation Voltage VBE(sat) -920 -1050 mV IC=-2A, IB=-400mA E-Line TO92 Compatible ZTX956 3-324 C B E ELECTRICAL CHARACTERISTICS (at Tamb= 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Base-Emitter Turn-On Voltage VBE(on) -770 -900 mV IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio hFE 100 100 50 200 200 150 10 300 IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* IC=-5A, VCE=-5V* Transition Frequency fT 110 MHz IC=-100mA, VCE=-10V f=50MHz Output Capacitance Cobo 32 pF VCB=-20V, f=1MHz Switching Times ton toff 67 1140 ns ns IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Thermal Resistance: Junction to Ambient Junction to Case Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W ZTX956 -40 2.0 1.0 0.0001 50 150 100 Derating curve T -Temperature (°C) Maximum transient thermal impedance Pulse Width (seconds) 10 100 1 0.1 0.01 4.0 3.0 -20 0 20 40 60 80 100 120 200 180 160 140 t1 tP D=t1/tP Case te m peratu re Ambien t tem peratur e D.C. D=0.6 D=0.2 D=0.1 Single Pulse 0.001 0 D=0.05 3-325 |
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