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2SJ349 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 2SJ349
상세설명  DC−DC Converter, Relay Drive and Motor Drive Applications
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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2SJ349
2009-12-10
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ349
DC−DC Converter, Relay Drive and Motor Drive
Applications
4-V gate drive
Low drain−source ON-resistance
: RDS (ON) = 33 mΩ (typ.)
High forward transfer admittance : |Yfs| = 20 S (typ.)
Low leakage current
: IDSS = −100 μA (max) (VDS = −60 V)
Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−60
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
−60
V
Gate−source voltage
VGSS
±20
V
DC
(Note 1)
ID
−20
A
Drain current
Pulse(Note 1)
IDP
−80
A
Drain power dissipation (Tc = 25°C)
PD
45
W
Single pulse avalanche energy
(Note 2)
EAS
800
mJ
Avalanche current
IAR
−20
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
2.78
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 1.44 mH, RG = 25 Ω, IAR = −20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)


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