전자부품 데이터시트 검색엔진 |
|
2SJ349 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
|
2SJ349 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SJ349 2009-12-10 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications 4-V gate drive Low drain−source ON-resistance : RDS (ON) = 33 mΩ (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.) Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS −60 V Drain−gate voltage (RGS = 20 kΩ) VDGR −60 V Gate−source voltage VGSS ±20 V DC (Note 1) ID −20 A Drain current Pulse(Note 1) IDP −80 A Drain power dissipation (Tc = 25°C) PD 45 W Single pulse avalanche energy (Note 2) EAS 800 mJ Avalanche current IAR −20 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 2.78 °C / W Thermal resistance, channel to ambient Rth (ch−a) 62.5 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −50 V, Tch = 25°C (initial), L = 1.44 mH, RG = 25 Ω, IAR = −20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) |
유사한 부품 번호 - 2SJ349_09 |
|
유사한 설명 - 2SJ349_09 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |