전자부품 데이터시트 검색엔진 |
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2SJ610 데이터시트(PDF) 4 Page - Toshiba Semiconductor |
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2SJ610 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SJ610 2009-07-13 4 0 0 40 120 160 200 10 30 40 20 80 Case temperature Tc (°C) RDS (ON) – Tc Drain-source voltage VDS (V) IDR – VDS Case temperature Tc (°C) Vth – Tc Case temperature Tc (°C) PD – Tc Total gate charge Qg (nC) Dynamic input/output characteristics Drain-source voltage VDS (V) Capacitance – VDS ID = −1 A −2 A 0 −80 −40 0 40 80 120 160 1 2 3 4 5 Common source VGS = −10 V Pulse test Ciss Coss Crss 1000 Common source VGS = 0 V f = 1 MHz Tc = 25°C −0.1 100 10 1 −1 −10 −100 −0.3 −3 −30 0 −80 −40 0 40 80 120 160 −2 −3 −4 −5 −1 Common source VDS = −10 V ID = −1 mA Pulse test −50 0 035 −300 VDD = −200 V Common source ID = −2 A Tc = 25°C Pulse test −200 −100 25 15 5 −100 VGS VDS −30 −25 −20 −15 −10 −5 −0 −1 0.1 0 0.2 0.4 1.2 −10 −100 Common source Tc = 25°C Pulse test 0.6 0.8 1.0 1.4 VGS = −10 V −5 V −3 V 0, 1 |
유사한 부품 번호 - 2SJ610_09 |
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유사한 설명 - 2SJ610_09 |
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