전자부품 데이터시트 검색엔진 |
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2SK3399 데이터시트(PDF) 4 Page - Toshiba Semiconductor |
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2SK3399 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3399 2009-09-29 4 RDS (ON) – Tc IDR – VDS Vth – Tc PD – Tc 160 0 1 3 2 6 5 4 −80 −40 0 40 80 120 Common source VDS = 10 V ID = 1 mA Pulse test 0 40 80 160 120 200 0 40 80 120 160 Case temperature Tc (°C) Drain-source voltage VDS (V) Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) Case temperature Tc (°C) Total gate charge Qg (nC) Dynamic input/output characteristics 2.5 1.5 0 −80 −40 0 40 80 160 120 0.5 1.0 2.5 2.0 Common source VGS = 10 V Pulse test ID = 10 A 5.0 0 0.1 −0.4 1 10 100 −0.6 −0.8 −1.2 5 −0.2 −1 10 1 3 VGS = 0, −1 V Common source Tc = 25°C Pulse test 500 400 0 100 200 300 0 10 20 30 50 40 Common source ID = 10 A Tc = 25°C Pulse test VDS 100 VGS VDD = 400 V 0 5 10 15 25 20 200 3 0.1 10 100 1000 5000 1 10 100 500 Common source VGS = 0 V f = 1 MHz Tc = 25°C Ciss Coss Crss 30 3 0.3 30 300 |
유사한 부품 번호 - 2SK3399_09 |
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유사한 설명 - 2SK3399_09 |
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