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2SK3466 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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2SK3466 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK3466 2010-04-06 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3466 Chopper Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 5 Drain current Pulse (Note 1) IDP 20 A Drain power dissipation (Tc = 25°C) PD 50 W Single pulse avalanche energy (Note 2) EAS 180 mJ Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-9F1C Weight: 0.74 g (typ.) 1 3 4 |
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