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TPCA8016-H 데이터시트(PDF) 3 Page - Toshiba Semiconductor |
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TPCA8016-H 데이터시트(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCA8016-H 2006-11-17 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current IDSS VDS = 60 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 60 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 45 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V VGS = 10 V, ID = 13 A ⎯ 16 21 Drain-source ON-resistance RDS (ON) VGS = 4.5 V, ID = 13 A ⎯ 20 26 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 13 A 20 40 ⎯ S Input capacitance Ciss ⎯ 1375 ⎯ Reverse transfer capacitance Crss ⎯ 70 ⎯ Output capacitance Coss ⎯ 340 ⎯ pF Gate resistance Rg VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 1.0 ⎯ Ω Rise time tr ⎯ 4 ⎯ Turn-on time ton ⎯ 10 ⎯ Fall time tf ⎯ 3 ⎯ Switching time Turn-off time toff Duty < = 1%, tw = 10 µs ⎯ 19 ⎯ ns VDD ∼ − 48 V, VGS = 10 V, ID = 25 A ⎯ 22 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ∼ − 48 V, VGS = 5 V, ID = 25 A ⎯ 12 ⎯ Gate-source charge 1 Qgs1 ⎯ 4.6 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 4.2 ⎯ Gate switch charge QSW VDD ∼ − 48 V, VGS = 10 V, ID = 25 A ⎯ 6.6 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 75 A Forward voltage (diode) VDSF IDR = 25 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ∼ − 30 V 0 V VGS 10 V ID = 13 A VOUT |
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