TPCA8020-H datasheet(3/7 Pages) TOSHIBA

부품명	TPCA8020-H

상세설명	Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) High-Efficiency DC竊뢈C Converter Applications

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPCA8020-H

2006-11-17

3

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±10

µA

Drain cutoff current

IDSS

VDS = 40 V, VGS = 0 V

⎯

10

µA

V (BR) DSS

ID = 10 mA, VGS = 0 V

40

⎯

Drain−source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

25

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.1

⎯

2.3

V

RDS (ON)

VGS = 4.5 V, ID = 3.8 A

⎯

27

35

Drain−source ON-resistance

RDS (ON)

VGS = 10 V, ID = 3.8 A

⎯

22

27

m

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 3.8 A

7.5

15

⎯

S

Input capacitance

Ciss

⎯

650

⎯

Reverse transfer capacitance

Crss

⎯

55

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

240

⎯

pF

Rise time

tr

⎯

3

⎯

Turn−on time

ton

⎯

9

⎯

Fall time

tf

⎯

2

⎯

Switching time

Turn−off time

toff

Duty <= 1%, tw = 10 µs

⎯

18

⎯

ns

VDD ∼− 32 V、VGS = 10 V、ID = 7.5 A

⎯

11

⎯

Total gate charge

(gate−source plus gate−drain)

Qg

VDD ∼− 32 V、VGS = 5 V、ID = 7.5 A

⎯

6.2

⎯

Gate−source charge

Qgs1

⎯

2.1

⎯

Gate−drain (“Miller”) charge

Qgd

⎯

2.7

⎯

Gate switching charge

Qsw

VDD ∼− 32 V、VGS = 10 V、ID = 7.5 A

⎯

3.5

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

IDRP

—

30

A

Forward voltage (diode)

VDSF

IDR = 7.5 A, VGS = 0 V

—

−1.2

V

VDD ∼− 20 V

0 V

VGS

10 V

ID = 3.8 A

VOUT

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