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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TPC8112 데이터시트(PDF) 5 Page - Toshiba Semiconductor |
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TPC8112 데이터시트(HTML) 5 Page - Toshiba Semiconductor |
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5 / 7 page  TPC8112 2006-11-15 5 RDS (ON) – Ta IDR – VDS Capacitance – VDS Vth – Ta PD – Ta Dynamic input/output characteristics Ambient temperature Ta (°C) Drain-source voltage VDS (V) Drain-source voltage VDS (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Total gate charge Qg (nC) 30 −0.1 −0.3 −1 −3 −10 −30 −100 100 300 1000 3000 10000 Crss Coss Ciss Common source VGS = 0 V f = 1 MHz Ta = 25°C −1.2 0 −80 −40 0 40 120 160 80 −0.4 −0.8 −1.6 −2.0 Common source VDS = −10 V ID = −1 mA Pulse test 80 120 160 200 0 0.8 1.2 1.6 2.0 0.4 0 40 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s (1) (2) 0 −10 −20 −30 0 40 80 120 160 Common source ID = −13 A Ta = 25°C Pulse test VDD = −24 V VDS VGS −30 −20 0 −10 200 VDD = −24 V −12 −12 −6 −6 0 −80 −40 0 40 120 160 80 10 20 30 ID = −13 A, −6.5 A, −3 A ID = −13 A, −6.5 A, −3 A VGS = −4 V −10 V Common source Pulse test 0 −0.1 −1 −10 −100 0.2 0.4 0.6 0.8 1.0 1.2 VGS = 0 V −1 −10 −5 −3 Common source Ta = 25°C Pulse test |
유사한 부품 번호 - TPC8112_06 |
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유사한 설명 - TPC8112_06 |
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