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RP1E050RP 데이터시트(PDF) 2 Page - Rohm

부품명 RP1E050RP
부품 상세설명  4V Drive Pch MOSFET
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제조업체  ROHM [Rohm]
홈페이지  http://www.rohm.com
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RP1E050RP 데이터시트(HTML) 2 Page - Rohm

  RP1E050RP Datasheet HTML 1Page - Rohm RP1E050RP Datasheet HTML 2Page - Rohm RP1E050RP Datasheet HTML 3Page - Rohm RP1E050RP Datasheet HTML 4Page - Rohm RP1E050RP Datasheet HTML 5Page - Rohm RP1E050RP Datasheet HTML 6Page - Rohm  
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Data Sheet
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©20
10 ROHM Co., Ltd. All rights reserved.
RP1E050RP
 
Electrical characteristics (Ta = 25
C)
Symbol
Min.
Typ.
Max.
Unit
Gate-source leakage
IGSS
--
10
AVGS=20V, VDS=0V
Drain-source breakdown voltage V(BR)DSS
30
-
-
V
ID=1mA, VGS=0V
Zero gate voltage drain current
IDSS
--
1
AVDS=30V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
-
2.5
V
VDS=10V, ID=1mA
-36
50
ID=5A, VGS=10V
-52
72
ID=2.5A, VGS=4.5V
-58
80
ID=2.5A, VGS=4.0V
Forward transistor admittance
l Yfs l4
-
-
S
ID=5A, VDS=10V
Input capacitance
Ciss
-
850
-
pF
VDS=10V
Output capacitance
Coss
-
120
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
120
-
pF
f=1MHz
Turn-on delay time
td(on)
-9
-
ns
ID=2.5A, VDD 15V
Rise time
tr
-
25
-
ns
VGS=10V
Turn-off delay time
td(off)
-
55
-
ns
RL=6.0
Fall time
tf
-
30
-
ns
RG=10
Total gate charge
Qg
-
9.2
-
nC ID=5A, VDD 15V
Gate-source charge
Qgs
-
2.4
-
nC VGS=5V RL=3.0
Gate-drain charge
Qgd
-
3.6
-
nC RG=10
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25
C)
Symbol
Min.
Typ.
Max. Unit
Forward Voltage
VSD
--
1.2
V
Is=5A, VGS=0V
*Pulsed
Conditions
Conditions
m
Parameter
Parameter
Static drain-source on-state
resistance
RDS (on)
*
*
*
*
*
*
*
*
*
*
2/5
2010.04- Rev.A


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