BD137 datasheet(2/4 Pages) ONSEMI

부품명	BD137

상세설명	Plastic Medium Power Silicon NPN Transistor

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BD135, BD137, BD139

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Type

Min

Max

UnIt

Collector−Emitter Sustaining Voltage*

(IC = 0.03 Adc, IB = 0)

BVCEO*

BD 135

BD 137

BD 139

45

60

80

−

Vdc

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

(VCB = 30 Vdc, IE = 0, TC = 125_C)

ICBO

−

0.1

10

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

10

mAdc

DC Current Gain

(IC = 0.005 A, VCE = 2 V)

(IC = 0.15 A, VCE = 2 V)

(IC = 0.5 A VCE = 2 V)

hFE*

25

40

25

−

250

−

Collector−Emitter Saturation Voltage*

(IC = 0.5 Adc, IB = 0.05 Adc)

VCE(sat)*

−

0.5

Vdc

Base−Emitter On Voltage*

(IC = 0.5 Adc, VCE = 2.0 Vdc)

VBE(on)*

−

1

Vdc

*Pulse Test: Pulse Width

x 300 ms, Duty Cycle x 2.0%.

10.0

1

Figure 1. Active−Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.5

0.01

2

5

10

20

80

BD135

BD137

BD139

50

0.1

0.05

TJ = 125°C

dc

5 ms

0.5 ms

0.1 ms

0.02

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BD137 데이터시트(PDF) 2 Page - ON Semiconductor

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