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TSH511CF 데이터시트(PDF) 6 Page - STMicroelectronics |
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TSH511CF 데이터시트(HTML) 6 Page - STMicroelectronics |
6 / 25 page Electrical characteristics TSH511 6/25 3 Electrical characteristics Table 4. VCC = 2.7V, Tamb = 25°C, faudio = 1kHz, fcarrier = 2.8MHz, frequency deviation = +/-75kHz (unless otherwise specified) Symbol Parameter Test conditions Min Typ Max Unit Overall circuit (referring to typical application schematic, without reject filters) ICC_OX Current consumption RX1 is on, RX2 is on SBY1 = ’Low’ SBY2 = X (X = position is irrelevant) 15 18 mA ICC_10 Current consumption RX1 is on, RX2 is off RX1 audio buffer is on RX2 audio buffer is on SBY1 = ’High’ SBY2 = ’Low’ 11 13 mA ICC_11 Current consumption RX1 is on, RX2 is off RX1 audio buffer is on RX2 audio buffer is off SBY1 = ’High’ SBY2 = ’High’ 9.5 11.5 mA MAUS Maximum usable average sensitivity With audio SINAD=12dB, audio BW=30kHz With audio SINAD=26dB, audio BW=30kHz 4 19 µVRMS SNOUT Output audio signal to noise ratio Vcarrier = 1mVRMS, with psophometric filter 58 dB Vi Input limiting voltage Output S/N reduced by 3dB, in BW = 30kHz Output S/N reduced by 3dB, psophometric filter 80 60 µVRMS THD Total harmonic distortion Vcarrier = 1mVRMS, with psophometric filter 0.6 % Low noise amplifier (LNA) section GLNA LNA voltage gain ZL= 2kΩ, fcarrier = 2.8MHz 18 22 28 dB BWLNA -3dB LNA bandwidth ZL = 2kΩ 20 MHz En_LNA Equivalent input noise voltage Rs = 0 Ω 3.4 nV/ √Hz In_LNA Equivalent input noise current Rs = 0 Ω 0.6 pA/ √Hz ZLNA_IN Input impedance defined as RLNA_IN in parallel with CLNA_IN RLNA_IN CLNA_IN 30 2 k Ω pF ZLNA_OUT Output impedance 200 Ω P1dB_LNA 1dB compression point ZL= 2kΩ ZL= 2kΩ, fcarrier= 2.8MHz 127 95 mVRMS IIP3LNA Input 3rd order interception point ZL= 2kΩ ZL= 2kΩ, fcarrier= 2.8MHz 30 22 mVRMS Amplifier (AMP) section GAMP Amplifier voltage gain ZL=2kΩ, fcarrier= 2.8MHz 16 20 dB |
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