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NP0640SBMCT3G 데이터시트(PDF) 3 Page - ON Semiconductor

부품명 NP0640SBMCT3G
부품 상세설명  80A, Ultra Low Capacitance TSPD
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
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NP0640SBMCT3G 데이터시트(HTML) 3 Page - ON Semiconductor

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NP−SBMC Series
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ELECTRICAL CHARACTERISTICS TABLE (TA = 25°C unless otherwise noted)
Symbol
Rating
Min
Typ
Max
Unit
V(BO)
Breakover voltage: The maximum voltage across the device in or at the
breakdown region.
VDC = 1000 V, dv/dt = 100 V/ms
NP0640SBMCT3G
$77
V
NP0720SBMCT3G
$88
NP0900SBMCT3G
$98
NP1100SBMCT3G
$130
NP1300SBMCT3G
$160
NP1500SBMCT3G
$180
NP1800SBMCT3G
$220
NP2100SBMCT3G
$240
NP2300SBMCT3G
$260
NP2600SBMCT3G
$300
NP3100SBMCT3G
$350
NP3500SBMCT3G
$400
I(BO)
Breakover Current: The instantaneous current flowing at the breakover voltage.
800
mA
IH
Holding Current: The minimum current required to maintain the device in the on−state.
150
mA
IDRM
Off−state Current: The dc value of current that results from the applica-
tion of the off−state voltage
VD = 50 V
2
mA
VD = VDRM
5
VT
On−state Voltage: The voltage across the device in the on−state condition.
IT = 2.2 A (pk), PW = 300 ms, DC = 2%
4
V
dv/dt
Critical rate of rise of off−state voltage: The maximum rate of rise of voltage (below VDRM) that
will not cause switching from the off−state to the on−state.
Linear Ramp between 0.1 VDRM and 0.9 VDRM
±5
kV/ms
di/dt
Critical rate of rise of on−state current: rated value of the rate of rise of current which the device
can withstand without damage.
±500
A/ms
CO
Off−state Capacitance
f = 1.0 MHz, Vd = 1.0 VRMS, VD = −2 Vdc
NP0640SBMCT3G
21
pF
NP0720SBMCT3G
21
NP0900SBMCT3G
21
NP1100SBMCT3G
21
NP1300SBMCT3G
21
NP1500SBMCT3G
21
NP1800SBMCT3G
21
NP2100SBMCT3G
21
NP2300SBMCT3G
21
NP3100SBMCT3G
21
NP3500SBMCT3G
21
THERMAL CHARACTERISTICS
Symbol
Rating
Value
Unit
TSTG
Storage Temperature Range
−65 to +150
°C
TJ
Junction Temperature
−40 to +150
°C
R0JA
Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
90
°C/W


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