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TS5N412DBQR 데이터시트(PDF) 3 Page - Texas Instruments |
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TS5N412DBQR 데이터시트(HTML) 3 Page - Texas Instruments |
3 / 18 page www.ti.com A EN(1) B (1) EN is the internal enable signal applied to the switch. Charge Pump VCC Absolute Maximum Ratings (1) Recommended Operating Conditions (1) TS5N412 4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH SCDS207 – AUGUST 2005 SIMPLIFIED SCHEMATIC, EACH FET SWITCH (SW) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCC Supply voltage range –0.5 7 V VIN Control input voltage range(2)(3) –0.5 7 V VI/O Switch I/O voltage range(2)(3)(4) –0.5 11 V II/O ON-state switch current(5) ±100 mA Continuous current through VCC or GND ±100 mA DBQ package 90 θ JA Package thermal impedance(6) °C/W PW package 108 Tstg Storage temperature range –65 150 °C (1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltages are with respect to ground, unless otherwise specified. (3) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed. (4) VI and VO are used to denote specific conditions for VI/O. (5) II and IO are used to denote specific conditions for II/O. (6) The package thermal impedance is calculated in accordance with JESD 51-7. MIN MAX UNIT VCC Supply voltage 4.75 5.25 V VIH High-level control input voltage 2 5.25 V VIL Low-level control input voltage 0 0.8 V VI/O Data input/output voltage 0 10 V TA Operating free-air temperature –40 85 °C (1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. 3 |
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