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2SK3065 데이터시트(PDF) 1 Page - Rohm |
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2SK3065 데이터시트(HTML) 1 Page - Rohm |
1 / 4 page 2SK3065 Transistors Small switching (60V, 2A) 2SK3065 !Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Silicon N-channel !External dimensions (Units : mm) ROHM : MPT3 EIAJ : SC-62 (1) Gate (2) Drain (3) Source −0.05 +0.1 +0.2 −0.1 (3) (2) (1) 3.0 ±0.2 1.5 ±0.1 1.5 ±0.1 0.4 ±0.1 0.5 ±0.1 0.4 ±0.1 0.4 1.5 ±0.1 4.5 1.6 ±0.1 Abbreviated symbol : KE MOS FET transistor !Absolute maximum ratings (Ta = 25 °C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation(Tc=25 °C) Channel temperature Storage temperature VDSS VGSS IDR PD Tch 60 V V A A W °C ±20 2 ID IDRP∗1 A IDP∗1 Continuous Pulsed Continuous Pulsed A 8 2 8 150 Tstg °C −55∼+150 Symbol Limits Unit ∗1 Pw ≤ 10µs, Duty cycle ≤ 1% ∗2 When mounted on a 40 × 40 × 0.7 mm alumina board. Reverse drain current 2∗2 0.5 !Internal equivalent circuit Drain Source Gate ∗Gate Protection Diode ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. !Electrical characteristics (Ta = 25 °C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Test Conditions VGS = 0V f = 1MHz VDS = 10V VGS = 4V ID = 1A, VDD 30V RL = 30Ω RG = 10Ω µA pF Ω Ω S Unit V µA V pF pF ns ns ns ns ID = 1A, VGS = 4V − − 60 − 0.8 − 1.5 Min. − − − − − − − 160 − −− − − 0.25 − Typ. 85 25 20 50 120 70 0.35 − ±10 10 1.5 0.32 − Max. − − − − − − 0.45 ID = 1A, VGS = 2.5V ID = 1A, VDS = 10V ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA IGSS IDSS Yfs∗ Ciss Symbol Coss Crss tr tf V(BR)DSS VGS(th) RDS(on) RDS(on) td(on) td(off) ∗ Pw ≤ 300µs, Duty cycle ≤ 1% Static drain-source on-state resistance |
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