KM416C256D, KM416V256D

CMOS DRAM

This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells

within the same row. Power supply voltage (+5.0V or +3.3V), access time (-5,-6,-7), power consumption(Normal or Low power) and

package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and

Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 fast page mode DRAM family is

fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability.

It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

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Part Identification

- KM416C256D/DL (5V, 512K Ref.)

- KM416V256D/DL (3.3V, 512K Ref.)

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Fast Page Mode operation

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2 CAS Byte/Wrod Read/Write operation

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CAS-before-RAS refresh capability

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RAS-only and Hidden refresh capability

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Self-refresh capability (L-ver only)

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TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

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Early Write or output enable controlled write

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JEDEC Standard pinout

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Available in 40-pin SOJ 400mil and44(40)-pin

TSOP(II) 400mil packages

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Triple +5V¡¾10% power supply(5V product)

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Triple +3.3V¡¾0.3V power supply(3.3V product)

Control

Clocks

VBB Generator

Refresh Timer

Refresh Control

Refresh Counter

Row Address Buffer

Col. Address Buffer

Row Decoder

Column Decoder

Lower

Data out

Buffer

RAS

UCAS

LCAS

W

Vcc

Vss

DQ0

to

DQ7

A0

.

.

A8

Memory Array

262,144 x16

Cells

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

256K x 16Bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION

FEATURES

FUNCTIONAL BLOCK DIAGRAM

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Refresh Cycles

Part

NO.

Refresh

cycle

Refresh period

Normal

L-ver

C256D

5V

512K

8ms

128ms

V256D

3.3V

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Performance Range:

Speed

Remark

-5

50ns

15ns

90ns

35ns

5V only

-6

60ns

15ns

10ns

40ns

5V/3.3V

-7

70ns

20ns

130ns

45ns

5V/3.3V

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Active Power Dissipation

Speed

3.3V(512 Ref.)

5V(512 Ref.)

-5

-

605

-6

325

495

-7

290

440

Unit : mW

Upper

Data in

Buffer

Upper

Data out

Buffer

Lower

Data in

Buffer

DQ8

to

DQ15

OE