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KM416V4100B 데이터시트(PDF) 4 Page - Samsung semiconductor

부품명 KM416V4100B
상세설명  4M x 16bit CMOS Dynamic RAM with Fast Page Mode
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제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416V4100B 데이터시트(HTML) 4 Page - Samsung semiconductor

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KM416V4000B, KM416V4100B
CMOS DRAM
*Note :
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time,
tPC.
DC AND OPERATING CHARACTERISTICS (Continued)
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @
tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @
tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @
tPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @
tRC=min)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=CAS-before-RAS cycling or 0.2V,
W, OE=VIH, Address=Don
′t care DQ=Open, TRC=31.25us
ICCS : Self Refresh Current
RAS=UCAS=LCAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM416V4000B
KM416V4100B
ICC1
Don
′t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
ICC2
Normal
L
Don
′t care
2
2
2
2
mA
mA
ICC3
Don
′t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
ICC4
Don
′t care
-45
-5
-6
70
60
50
80
70
60
mA
mA
mA
ICC5
Normal
L
Don
′t care
500
300
500
300
uA
uA
ICC6
Don
′t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
ICC7
L
Don
′t care
400
400
uA
ICCS
L
Don
′t care
400
400
uA


유사한 부품 번호 - KM416V4100B

제조업체부품명데이터시트상세설명
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유사한 설명 - KM416V4100B

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