전자부품 데이터시트 검색엔진 |
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KM6264BLG-10L 데이터시트(PDF) 6 Page - Samsung semiconductor |
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KM6264BLG-10L 데이터시트(HTML) 6 Page - Samsung semiconductor |
6 / 10 page KM6264B Family ELECTRONICS CMOS SRAM Revision. 0.0 Auust. 1996 6 KM6264BL KM6264BL-L KM6264BLE KM6264BLE-L KM6264BLI KM6264BLI-L Vcc for data retention Data retention current Data retention set-up time Recovery time DATA RETENTION CHARACTERISTICS Vdr Idr tSDR tRDR /CS***¡ ÃVcc-0.2V Vcc=3.0V /CS¡ ÃVcc-0.2V See data retention waveform Typ** - 1 0.5 - - - - - - Unit V uA ms L-Ver LL-Ver L-Ver LL-Ver L-Ver LL-Ver Min 2.0 - - - - - - 0 5 Max 5.5 50 5 50 25 50 25 - - * 1) Commercial Product : Ta=0 to 70 ° C, unless otherwise specified 2) Extended Product : Ta=-25 to 85 ° C, unless otherwise specified 3) Industrial Product : Ta=-40 to 85 ° C, unless otherwise specified ** Ta=25 ° C *** /CS1 ¡ Ã Vcc-0.2, CS2 ¡ Ã Vcc-0.2(/CS1 Controlled) or CS2 ¡ Ã 0.2(CS2 Controlled) Item Symbol Test Condition* DATA RETENTION TIMING DIAGRAM Vcc 4.5V 2.2V /CS1 GND /CS1¡ Ã Vcc-0.2V Vdr tSDR tRDR Data retention mode 1) /CS1 controlled Vcc 4.5V CS2 0.4V GND CS2¡ Â 0.2V Vdr tSDR tRDR Data retention mode 2) CS2 controlled |
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