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KM68257CLJ-15 데이터시트(PDF) 6 Page - Samsung semiconductor

부품명 KM68257CLJ-15
상세설명  32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range.
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제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

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KM68257C/CL
CMOS SRAM
PRELIMINARY
Rev 3.0
- 6 -
February-1996
TIMING WAVE FORM OF READ CYCLE(2)(WE=VIH)
CS
OE
Data Out
ADD
NOTES(READ CYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V OH or VOL Levels.
4. At any given temperature and voltage condition, t HZ(Max.) is less than t LZ (Min.) both for a given device and from device to device.
5. Transition is measured
±200§Æ from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=VIL.
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycl e.
TIMING WAVE FORM OF WRITE CYCLE(1)(OE=Clock)
OE
CS
Data In
WE
High-Z
ADD
Data Out
Data Valid
High-Z(8)
50%
50%
Vcc
Current
Data Valid
Icc
ISB
tRC
tAA
tCO
tHZ(3,4,5)
tOHZ
tOH
tPD
tLZ(4,5)
tOLZ
tOE
tPU
tWC
tAW
tCW(3)
tWP(2)
tAS(4)
tDW
tDH
tOHZ(6)
tWR(5)


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