KM6164002E datasheet(8/9 Pages) SAMSUNG

부품명	KM6164002E

상세설명	CMOS SRAM

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제조업체	SAMSUNG [Samsung semiconductor]

홈페이지	http://www.samsung.com/Products/Semiconductor

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8 / 9 page

KM6164002, KM6164002E, KM6164002I

CMOS SRAM

PRELIMINARY

Rev 2.0

- 2 -

June -1997

PIN FUNCTION

Pin Name

Pin Function

A0 - A17

Address Inputs

WE

Write Enable

CS

Chip Select

OE

Output Enable

LB

Lower-byte Control(I/O1~I/O8)

UB

Upper-byte Control(I/O9~I/O16)

I/O1 ~ I/O16

Data Inputs/Outputs

VCC

Power(+5.0V)

VSS

Ground

256K x 16 Bit High-Speed CMOS Static RAM

The KM6164002 is a 4,194,304-bit high-speed Static Random

Access Memory organized as 262,144 words by 16 bits. The

KM6164002 uses 16 common input and output lines and has an

output enable pin which operates faster than address access

time at read cycle. Also it allows that lower and upper byte

access by data byte control (UB, LB). The device is fabricated

using SAMSUNG's advanced CMOS process and designed for

high-speed circuit technology. It is particularly well suited for use

in

high-density

high-speed

system

applications.

The

KM6164002 is packaged in a 400mil 44-pin plastic SOJ.

GENERAL DESCRIPTION

FEATURES

¡Ü

Fast Access Time 20,25§À(Max.)

¡Ü

Low Power Dissipation

Standby (TTL)

: 60§Ì(Max.)

CMOS) : 10§Ì(Max.)

Operating KM6164002 - 20 : 240§Ì(Max.)

KM6164002 - 25 : 220§Ì(Max.)

¡Ü

Single 5.0V

±10% Power Supply

¡Ü

TTL Compatible Inputs and Outputs

¡Ü

I/O Compatible with 3.3V Device

¡Ü

Fully Static Operation

- No Clock or Refresh required

¡Ü

Three State Outputs

¡Ü

Center Power/Ground Pin Configuration

¡Ü

Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16

¡Ü

Standard Pin Configuration

KM6164002J : 44-SOJ-400

Clk Gen.

I/O1 ~ I/O8

OE

UB

CS

PIN CONFIGURATION (Top View)

SOJ

FUNCTIONAL BLOCK DIAGRAM

Data

Cont.

Column Select

CLK

Gen.

Pre-Charge Circuit

Memory Array

1048 Rows

256x16 Columns

I/O Circuit &

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

A17

A16

A15

OE

UB

LB

I/O16

I/O15

I/O14

I/O13

Vss

Vcc

I/O12

I/O11

I/O10

I/O9

N.C

A14

A13

A12

A11

A10

A0

A1

A2

A3

A4

CS

I/O1

I/O2

I/O3

I/O4

Vcc

Vss

I/O5

I/O6

I/O7

I/O8

WE

A5

A6

A7

A8

A9

I/O9 ~ I/O16

Data

Cont.

WE

LB

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

A0

A1

A2

A3

A4

A6

A7

A8

A12

A13

KM6164002 -20/25

Commercial Temp.

KM6164002E -20/25

Extended Temp.

KM6164002I -20/25

Industrial Temp.

ORDERING INFORMATION

A5 A9 A10 A11 A14 A15 A16 A17

유사한 부품 번호 - KM6164002E

제조업체	부품명	데이터시트	상세설명
Samsung semiconductor	KM6164000B	151Kb / 9P	256Kx16 bit Low Power CMOS Static RAM
	KM6164000BL-L	151Kb / 9P	256Kx16 bit Low Power CMOS Static RAM
	KM6164000BLI-L	151Kb / 9P	256Kx16 bit Low Power CMOS Static RAM
	KM6164000BLR-5L	151Kb / 9P	256Kx16 bit Low Power CMOS Static RAM
	KM6164000BLR-7L	151Kb / 9P	256Kx16 bit Low Power CMOS Static RAM

More results

유사한 설명 - KM6164002E

제조업체	부품명	데이터시트	상세설명
Samsung semiconductor	K6T4016C3C	148Kb / 9P	CMOS SRAM
	K6X8008T2B	129Kb / 9P	CMOS SRAM
	K6R4008V1B	214Kb / 10P	CMOS SRAM
Hynix Semiconductor	HY62256A	820Kb / 9P	32Kx8bit CMOS SRAM
Hynix Semiconductor	HY62CT08081E	186Kb / 12P	32Kx8bit CMOS SRAM
List of Unclassifed Man...	STK11C68-M	59Kb / 10P	CMOS NV SRAM
Hynix Semiconductor	HY628100A	128Kb / 9P	128Kx8bit CMOS SRAM
	HY62KT08081E	192Kb / 12P	32Kx8bit CMOS SRAM
	HY62U8400A	180Kb / 11P	512Kx8bit CMOS SRAM
	HY62SF16406D	194Kb / 11P	256Kx16bit full CMOS SRAM

More results

KM6164002E 데이터시트(PDF) 8 Page - Samsung semiconductor

KM6164002E 데이터시트(HTML) 8 Page - Samsung semiconductor

유사한 부품 번호 - KM6164002E

유사한 설명 - KM6164002E

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