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SI-7600D 데이터시트(PDF) 4 Page - Sanken electric |
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SI-7600D 데이터시트(HTML) 4 Page - Sanken electric |
4 / 5 page 101 SI-7600/SI-7600D 3-Phase Stepper Motor Driver ICs (Star Connection/Delta Connection) SI-7600/SI-7600D Ton Toff ITrip IOUT 1.5V VRC 0.5V Fast Decay VPFD Slow Decay 15 5 10 0 25 050 75 Ambient temperature Ta ( °C) (W) 100 125 150 Without heatsink 6. Method of Calculating Power Loss of Output MOS FET The SI-7600 uses a MOS-FET array for output. The power loss of this MOS FET array can be calculated as summarized below. This is an approximate value that does not reflect parameter variations or other factors during use in the actual application. Therefore, heat from the MOS FET array should actually be measured. q Parameters for calculating power loss To calculate the power loss of the MOS FET array, the following parameters are needed: (1) Control current Io (max) (2) Excitation method (3) Chopping ON-OFF time at current control: TON, TOFF, tOFFf (TON: ON time, TOFF: OFF time, tOFFf: Fast Decay time at OFF) (4) ON resistance of MOS FET: RDS (ON) (5) Forward voltage of MOS FET body diode: VSD For (4) and (5), use the maximum values of the MOS FET speci- fications. (3) should be confirmed on the actual application. q Power loss of Pch MOS FETs The power loss of Pch MOS FETs is caused by the ON resis- tance and by the chopping-OFF regenerative current flowing through the body diodes in Fast Decay mode. (In Slow Decay mode, the chopping-OFF regenerative current does not flow the body diodes.) The losses are ON resistance loss P1: P1=IM2 ×RDS (ON) Body diode loss P2: P2=IM ×VSD With these parameters, the loss Pp per MOS FET is calculated depending on the actual excitation method as follows: a) 2-phase excitation (T=TON +TOFF) PP= (P1 ×TON/T+P2×tOFFf/T)× (1/3) b) 2-3 phase excitation (T=TON +TOFF) PP= (P1 ×TON/T+P2×tOFFf/T)×(1/4)+(0.5×P1×TON/T+P2×tOFFf/ T) ×(1/12) q Power loss of Nch MOS FETs The power loss of Nch MOS FETs is caused by the ON resis- tance or by the chopping-OFF regenerative current flowing through the body diodes. (This loss is not related to the current control method, Slow, Mixed, or Fast Decay.) The losses are ON resistance loss N1: N1=IM2 ×RDS(ON) Body diode loss N2: N2=IM ×VSD With these parameters, the loss PN per MOS FET is calculated depending on the actual excitation method as follows: a) 2-phase excitation (T=TON+TOFF) PN=(N1+N2 ×TOFF/T)× (1/3) b) 2-3 phase excitation (T=TON+TOFF) PN=(N1+N2 ×TOFF/T)×(1/4)+(0.5N1+N2×TOFF/T)×(1/12) qDetermining power loss and heatsink when SLA5017 is used If the SLA5017 is used in an output section, the power losses of a Pch MOS FET and an Nch MOS FET should be multiplied by three and added to determine the total loss P of SLA5017. In other words, P=3 ×PP+3×PN The allowable losses of SLA5017 are Without heatsink: 5W θj-a=25°C/W Infinite heatsink: 35W θj-c=3.57°C/W Select a heatsink by considering the calculated losses, allow- able losses, and following ratings: When selecting a heatsink for SLA5017, be sure to check the product temperature when in use in an actual applicaiton. The calculated loss is an approximate value and therefore con- tains a degree of error. Select a heatsink so that the surface Al fin temperature of SLA5017 will not exceed 100 °C under the worst conditions. Relationship between RC terminal voltage and output current |
유사한 부품 번호 - SI-7600D |
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유사한 설명 - SI-7600D |
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