전자부품 데이터시트 검색엔진 |
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ISL22319WFU8Z 데이터시트(PDF) 4 Page - Intersil Corporation |
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ISL22319WFU8Z 데이터시트(HTML) 4 Page - Intersil Corporation |
4 / 13 page 4 FN6310.0 July 3, 2006 Operating Specifications Over the recommended operating conditions unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS MIN TYP (NOTE 5) MAX UNIT ICC1 VCC Supply Current (volatile write/read) 10k DCP, fSCL = 400kHz; (for I 2C active, read and write states) 1mA VCC Supply Current (volatile write/read, non-volatile read) 50k DCP, fSCL = 400kHz; (for I 2C active, read and write states) 0.5 mA ICC2 VCC Supply Current ( non-volatile write/read) 10k DCP, fSCL = 400kHz; (for I 2C active, read and write states) 3.2 mA VCC Supply Current (non-volatile write/read) 50k DCP, fSCL = 400kHz; (for I 2C active, read and write states) 2.7 mA ISB VCC Current (standby) VCC = +5.5V , 10k DCP, I 2C interface in standby state 850 µA VCC = +3.6V, 10k DCP, I 2C interface in standby state 550 µA VCC = +5.5V, 50k DCP, I 2C interface in standby state 160 µA VCC = +3.6V, 50k DCP, I 2C interface in standby state 100 µA ISD VCC Current (shutdown) VCC = +5.5V @ +85°C, I 2C interface in standby state 3µA VCC = +5.5V @ +125°C, I 2C interface in standby state 5µA VCC = +3.6V @ +85°C, I 2C interface in standby state 2µA VCC = +3.6V @ +125°C, I 2C interface in standby state 4µA ILkgDig Leakage Current, at Pins A0, A1, SHDN, SDA, and SCL Voltage at pin from GND to VCC -1 1 µA tDCP (Note 14) DCP Wiper Response Time SCL falling edge of last bit of DCP data byte to wiper new position 1.5 µs tShdnRec (Note 14) DCP Recall Time from Shutdown Mode From rising edge of SHDN signal to wiper stored position and RH connection 1.5 µs SCL falling edge of last bit of ACR data byte to wiper stored position and RH connection 1.5 µs Vpor Power-on Recall Voltage Minimum VCC at which memory recall occurs 2.0 2.6 V VCC Ramp VCC Ramp Rate 0.2 V/ms tD Power-up Delay VCC above Vpor, to DCP Initial Value Register recall completed, and I2C Interface in standby state 3ms EEPROM SPECIFICATION EEPROM Endurance 1,000,000 Cycles EEPROM Retention Temperature °C 50 Years tWC (Note 15) Non-volatile Write Cycle Time 12 20 ms SERIAL INTERFACE SPECS VIL A1, A0, SHDN, SDA, and SCL Input Buffer LOW Voltage -0.3 0.3*VCC V VIH A1, A0, SHDN, SDA, and SCL Input Buffer HIGH Voltage 0.7*VCC VCC+0.3 V T55 ≤ ISL22319 |
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