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STB7N52K3 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STB7N52K3
상세설명  N-channel 525 V, 0.84 OHM, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STB7N52K3 데이터시트(HTML) 5 Page - STMicroelectronics

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STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Electrical characteristics
Doc ID 14896 Rev 2
5/18
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 260 V, ID = 3 A,
RG = 4.7 Ω, VGS = 10 V
(see
Figure 19)
-
11
22
30
22
-
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
6.2
24.8
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 6 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 24)
-
260
1
11
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see
Figure 24)
-
338
1.4
13
ns
nC
A
Table 8.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
BVGSO
(1)
1.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
30
-
-
V


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