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STU40N2LH5 데이터시트(PDF) 1 Page - STMicroelectronics |
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1 / 15 page September 2009 Doc ID 14919 Rev 3 1/15 15 STD40N2LH5 STU40N2LH5 N-channel 25 V, 0.01 Ω, 40 A, DPAK, IPAK STripFET™ V Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications Description This STripFET™ V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on- state resistance providing also one of the best-in- class figure of merit (FOM). Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STD40N2LH5 25 V 0.0118 Ω 40 A STU40N2LH5 25 V 0.0124 Ω 40 A DPAK 1 3 3 2 1 IPAK Table 1. Device summary Order codes Marking Package Packaging STD40N2LH5 40N2LH5 DPAK Tape and reel STU40N2LH5 40N2LH5 IPAK Tube www.st.com |
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