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STB85NF55 데이터시트(PDF) 4 Page - STMicroelectronics |
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STB85NF55 데이터시트(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STB/I/P85NF55 4/15 Doc ID 8405 Rev 9 2 Electrical characteristics (TCASE= 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 55 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 40 A 0.0062 0.008 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS = 15 V, ID = 40 A - 120 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f = 1 MHz, VGS = 0 - 3700 900 310 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 60 V, ID = 80 A VGS =10 V - 120 30 45 150 nC nC nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD= 30 V, ID= 40 A, RG=4.7 Ω, VGS=10 V Figure 14 on page 8 - 25 100 70 35 - ns ns ns ns |
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