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STF5NK90Z 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STF5NK90Z
상세설명  N-channel 900V - 2廓 - 4.5A - TO-220/TO-220FP Zener - Protected SuperMESH??MOSFET
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STF5NK90Z 데이터시트(HTML) 3 Page - STMicroelectronics

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Obsolete
Product(s)
- Obsolete
Product(s)
STP5NK90Z - STF5NK90Z
Electrical ratings
3/15
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
STP5NK90Z
STF5NK90Z
VDS
Drain-source voltage (VGS = 0)
900
V
VDGR
Drain-gate voltage (RGS = 20KΩ)
900
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
4.5
4.5 (2)
A
ID
Drain current (continuous) at TC=100°C
2.8
2.8 (2)
A
IDM
(1)
1.
Pulse width limited by safe operation area
Drain current (pulsed)
18
18 (2)
2.
Limited only by maximum temperature allowed
A
PTOT
Total dissipation at TC = 25°C
125
30
W
Derating Factor
1
0.24
W/°C
VESD (G-S) Gate source ESD (HBM-C=100pF, R=1.5KΩ)
4000
V
dv/dt(3)
3.
ISD ≤4.5 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Peak diode recovery voltage slope
4.5
V/ns
VISO
Insulation withstand voltage (DC)
-
2500
V
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 150
-55 to 150
°C
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
TO-220
TO-220FP
Rthj-case
Thermal resistance junction-case Max
1
4.2
°C/W
Rthj-a
Thermal resistance junction-ambient Max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
4.5
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
230
mJ


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