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STF25NM50N 데이터시트(PDF) 4 Page - STMicroelectronics |
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STF25NM50N 데이터시트(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STx25NM50N 4/18 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 500 V dv/dt (1) 1. Characteristic value at turn off on inductive load Drain source voltage slope VDD = 400 V, ID = 25 A, VGS = 10 V 44 V/ns IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 11 A 0.110 0.140 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VDS =15 V, ID = 11 A 19 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 2565 511 77 pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS Equivalent output capacitance VGS = 0, VDS = 0 to 400 V 315 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 22 A, VGS = 10 V, (see Figure 19) 84 11 35 nC nC nC Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain 1.6 Ω |
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