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STGB10NC60KD 데이터시트(PDF) 5 Page - STMicroelectronics |
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5 / 20 page STGx10NC60KD Electrical characteristics Doc ID 11423 Rev 6 5/20 2 Electrical characteristics (Tj =25°C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE= 0) IC= 1mA 600 V VCE(sat) Collector-emitter saturation voltage VGE= 15V, IC= 5A VGE= 15V, IC= 5A, Tj= 125°C 2.2 1.8 2.5 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 250µA 4.5 6.5 V ICES Collector cut-off current (VGE = 0) VCE= 600 V VCE=600 V, Tj = 125°C 150 1 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE= ±20V ±100 nA gfs (1) 1. Pulse test: pulse duration < 300 µs, duty cycle < 2 % Forward transconductance VCE = 15V, IC= 5A 15 S Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25V, f = 1MHz, VGE = 0 - 380 46 8.5 - pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390V, IC = 5A, VGE = 15V, (see Figure 19) - 19 5 9 - nC nC nC |
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