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STGP10NC60HD 데이터시트(PDF) 4 Page - STMicroelectronics |
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STGP10NC60HD 데이터시트(HTML) 4 Page - STMicroelectronics |
4 / 19 page Electrical characteristics STGB10NC60HD, STGD10NC60HD, STGF10NC60HD, STGP10NC60HD 4/19 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE= 0) IC= 1 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 5 A VGE = 15 V, IC = 5 A, TC = 125 °C 1.9 1.7 2.5 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 3.75 5.75 V ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, TC = 125 °C 150 1 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V ±100 nA gfs (1) 1. Pulse duration = 300 μs, duty cycle 1.5 % Forward transconductance VCE = 15 V, IC= 5 A 3.5 S Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 365 43 8.3 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390 V, IC = 5 A, VGE = 15 V (see Figure 19) 19.2 4.5 7 nC nC nC |
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