전자부품 데이터시트 검색엔진 |
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STD20NF20 데이터시트(PDF) 5 Page - STMicroelectronics |
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STD20NF20 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 15 page STD20NF20, STF20NF20, STP20NF20 Electrical characteristics Doc ID 13154 Rev 4 5/15 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) - 18 72 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 20 A, VGS = 0 - 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, di/dt = 100A/µs VDD = 50 V (see Figure 20) - 155 775 10 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, di/dt = 100 A/µs VDD = 50 V, Tj = 150 °C (see Figure 20) - 183 1061 11.6 ns nC A |
유사한 부품 번호 - STD20NF20_09 |
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유사한 설명 - STD20NF20_09 |
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